RJK1003DPP-E0#T2

Renesas

RJK1003DPP-E0#T2

Datasheet

模拟与电源

RJK1003DPP - N-CHANNEL MOSFET 10

停产/老旧TO-220-3 Full Pack模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs11mOhm @ 25A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4150 pF @ 10 V
制造商Renesas
安装类型Through Hole
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 1mA

电气

漏源电压100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C50A (Ta)
最大功耗25W (Tc)

机械

封装Bulk
Package / CaseTO-220-3 Full Pack
供应商器件封装TO-220FP

环境

工作温度150°C