HS54095TZ-E

Renesas

HS54095TZ-E

模拟与电源

HS54095TZ-E - N-CHANNEL POWER MO

停产/老旧TO-226-3, TO-92-3 (TO-226AA)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs16.5Ohm @ 100mA, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds66 pF @ 25 V
制造商Renesas
安装类型Through Hole
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 1mA

电气

漏源电压600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C200mA (Ta)
最大功耗750mW (Ta)

机械

封装Bulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
供应商器件封装TO-92

环境

工作温度150°C