HAT1044M-EL-E

Renesas

HAT1044M-EL-E

模拟与电源

HAT1044M-EL-E - SILICON P CHANNE

停产/老旧SOT-23-6 Thin, TSOT-23-6模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs60mOhm @ 3A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds600 pF @ 10 V
制造商Renesas
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 1mA

电气

漏源电压30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C4.5A (Ta)
最大功耗1.05W (Ta)

机械

封装Bulk
Package / CaseSOT-23-6 Thin, TSOT-23-6
供应商器件封装6-TSOP

环境

工作温度150°C