UPA2810T1L-E1-AY

Renesas Electronics Corporation

UPA2810T1L-E1-AY

模拟与电源

MOSFET P-CH 30V 13A 8DFN

停产/老旧8-VDFN Exposed Pad模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs12mOhm @ 13A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1860 pF @ 10 V
制造商Renesas Electronics Corporation
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 1mA

电气

漏源电压30 V
Current - Continuous Drain (Id) @ 25°C13A (Ta)
最大功耗1.5W (Ta)

机械

封装Bulk
Package / Case8-VDFN Exposed Pad
供应商器件封装8-DFN3333 (3.3x3.3)

环境

工作温度150°C (TJ)