UPA2765T1A-E2-AY

Renesas Electronics Corporation

UPA2765T1A-E2-AY

Datasheet

模拟与电源

MOSFET N-CH 30V 100A 8HVSON

停产/老旧8-PowerVDFN模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs2.9mOhm @ 32A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6550 pF @ 10 V
制造商Renesas Electronics Corporation
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs (Max)±20V

电气

漏源电压30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C100A (Ta)
最大功耗1.5W (Ta), 83W (Tc)

机械

封装Tape & Reel (TR)
Package / Case8-PowerVDFN
供应商器件封装8-HVSON (5x5.4)

环境

工作温度150°C (TJ)