UPA2717GR-E1-AT

Renesas Electronics Corporation

UPA2717GR-E1-AT

模拟与电源

P-CHANNEL POWER MOSFET

在产8-PowerSOIC (0.173", 4.40mm Width)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs5.5mOhm @ 7.5A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3550 pF @ 10 V
制造商Renesas Electronics Corporation
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 1mA

电气

漏源电压30 V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Current - Continuous Drain (Id) @ 25°C15A
最大功耗2W (Ta)

机械

封装Bulk
Package / Case8-PowerSOIC (0.173", 4.40mm Width)
供应商器件封装8-PowerSOP

环境

工作温度150°C