UPA2690T1R-E2-AX

Renesas Electronics Corporation

UPA2690T1R-E2-AX

Datasheet

模拟与电源

MOSFET N/P-CH 20V 4A/3A 6HUSON

在产6-WFDFN Exposed Pad模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs42mOhm @ 2A, 4.5V
基础料号UPA2690
配置N and P-Channel Complementary
FET FeatureLogic Level Gate, 2.5V Drive
Gate Charge (Qg) (Max) @ Vgs4.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds330pF @ 10V
制造商Renesas Electronics Corporation
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)

电气

漏源电压20V
Current - Continuous Drain (Id) @ 25°C4A, 3A
Power - Max2.3W

机械

封装Tape & Reel (TR)
Package / Case6-WFDFN Exposed Pad
供应商器件封装6-HUSON (2x2)

环境

工作温度150°C (TJ)