UPA2680T1E-E2-AT

Renesas Electronics Corporation

UPA2680T1E-E2-AT

模拟与电源

MOSFET N-CH 20V 3A 6MLP

停产/老旧6-VDFN Exposed Pad模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs50mOhm @ 3A, 10V
FET FeatureSchottky Diode (Isolated)
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs3.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds190 pF @ 10 V
制造商Renesas Electronics Corporation
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 250µA

电气

漏源电压20 V
Current - Continuous Drain (Id) @ 25°C3A (Ta)

机械

封装Bulk
Package / Case6-VDFN Exposed Pad
供应商器件封装6-MLP (3x3)