UPA2350T1P-E4-A

Renesas Electronics Corporation

UPA2350T1P-E4-A

模拟与电源

MOSFET 2N-CH 20V 6A LGA

停产/老旧4-XFBGA模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs35mOhm @ 3A, 4.5V
基础料号UPA2350
配置2 N-Channel (Dual) Common Drain
FET FeatureLogic Level Gate, 2.5V Drive
Gate Charge (Qg) (Max) @ Vgs8.6nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds542pF @ 10V
制造商Renesas Electronics Corporation
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5V @ 1mA

电气

漏源电压20V
Current - Continuous Drain (Id) @ 25°C6A (Ta)
Power - Max1.3W (Ta)

机械

封装Tape & Reel (TR)
Package / Case4-XFBGA
供应商器件封装4-EFLIP-LGA (1.62x1.62)

环境

工作温度150°C