通用
| 制造商 | Renesas Electronics Corporation |
|---|---|
| 安装类型 | Through Hole |
| Product Status | Active |
| Transistor Type | 4 NPN (Quad) |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 30mA, 3A |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - Collector Emitter Breakdown (Max) | 100V |
|---|---|
| Current - Collector (Ic) (Max) | 5A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 800 @ 1A, 5V |
| Power - Max | 3.5W |
机械
| 封装 | Bulk |
|---|---|
| Package / Case | 10-SIP |
| 供应商器件封装 | 10-SIP |
环境
| 工作温度 | -55°C ~ 150°C (TJ) |
|---|