RQJ0303PGDQA#H6

Name: RQJ0303PGDQA#H6
Brand: Renesas Electronics Corporation

模拟与电源

MOSFET P-CH 30V 3.3A 3MPAK

已停产TO-236-3, SC-59, SOT-23-3模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	68mOhm @ 1.6A, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	625 pF @ 10 V
制造商	Renesas Electronics Corporation
安装类型	Surface Mount
Product Status	Last Time Buy
技术	MOSFET (Metal Oxide)
Vgs (Max)	+10V, -20V

漏源电压	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	3.3A (Ta)
最大功耗	800mW (Ta)

工作温度	150°C (TJ)