RJM0603JSC-00#12

Renesas Electronics Corporation

RJM0603JSC-00#12

模拟与电源

MOSFET 3N/3P-CH 60V 20A 20HSOP

在产20-SOIC (0.433", 11.00mm Width) Exposed Pad模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs20mOhm @ 10A, 10V
配置3 N and 3 P-Channel (3-Phase Bridge)
FET FeatureLogic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs43nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2600pF @ 10V
制造商Renesas Electronics Corporation
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 1mA

电气

漏源电压60V
Current - Continuous Drain (Id) @ 25°C20A
Power - Max54W

机械

封装Tray
Package / Case20-SOIC (0.433", 11.00mm Width) Exposed Pad
供应商器件封装20-HSOP

环境

GradeAutomotive
工作温度175°C
QualificationAEC-Q101