RJM0306JSP-01#J0

Renesas Electronics Corporation

RJM0306JSP-01#J0

模拟与电源

MOSFET 2N/2P-CH 30V 3.5A 8SOP

在产8-SOIC (0.154", 3.90mm Width)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs65mOhm @ 2A, 10V
基础料号RJM0306
配置2 N and 2 P-Channel (Full Bridge)
FET FeatureLogic Level Gate, 4V Drive
Gate Charge (Qg) (Max) @ Vgs5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds290pF @ 10V
制造商Renesas Electronics Corporation
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)

电气

漏源电压30V
Current - Continuous Drain (Id) @ 25°C3.5A
Power - Max2.2W

机械

封装Tube
Package / Case8-SOIC (0.154", 3.90mm Width)
供应商器件封装8-SOP