RJK1557DPA-00#J0

Renesas Electronics Corporation

RJK1557DPA-00#J0

Datasheet

模拟与电源

MOSFET N-CH 150V 25A 8WPAK

在产8-PowerWDFN模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs58mOhm @ 12.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1250 pF @ 25 V
制造商Renesas Electronics Corporation
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±30V

电气

漏源电压150 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C25A (Ta)
最大功耗30W (Tc)

机械

封装Tape & Reel (TR)
Package / Case8-PowerWDFN
供应商器件封装8-WPAK (3)

环境

工作温度150°C (TJ)