RJK03P9DPA-00#J5A

Renesas Electronics Corporation

RJK03P9DPA-00#J5A

模拟与电源

MOSFET 2N-CH 30V 20A/50A 8WPAK

停产/老旧8-WFDFN Exposed Pad模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs7mOhm @ 10A, 10V
基础料号RJK03P9
配置2 N-Channel (Half Bridge)
FET FeatureLogic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs7.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1660pF @ 10V
制造商Renesas Electronics Corporation
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)

电气

漏源电压30V
Current - Continuous Drain (Id) @ 25°C20A, 50A
Power - Max15W, 35W

机械

封装Bulk
Package / Case8-WFDFN Exposed Pad
供应商器件封装8-WPAK

环境

工作温度150°C (TJ)