RJK03M1DPA-00#J5A

Renesas Electronics Corporation

RJK03M1DPA-00#J5A

Datasheet

模拟与电源

MOSFET N-CH 30V 50A 8WPAK

在产8-PowerVDFN模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs2.3mOhm @ 25A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds4720 pF @ 10 V
制造商Renesas Electronics Corporation
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±20V

电气

漏源电压30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C50A (Ta)
最大功耗45W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerVDFN
供应商器件封装WPAK(3F) (5x6)

环境

工作温度150°C (TJ)