NP90N03VUG-E1-AY

Renesas Electronics Corporation

NP90N03VUG-E1-AY

模拟与电源

MOSFET N-CH 30V 90A TO252

停产/老旧TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs3.2mOhm @ 45A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7500 pF @ 25 V
制造商Renesas Electronics Corporation
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA

电气

漏源电压30 V
Current - Continuous Drain (Id) @ 25°C90A (Tc)
最大功耗1.2W (Ta), 105W (Tc)

机械

封装Bulk
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件封装TO-252

环境

工作温度175°C (TJ)