NP50P06SDG-E1-AY

Name: NP50P06SDG-E1-AY
Brand: Renesas Electronics Corporation

模拟与电源

MOSFET P-CH 60V 50A TO-252

在产TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	16.5mOhm @ 25A, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	5000 pF @ 10 V
制造商	Renesas Electronics Corporation
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5V @ 250µA

漏源电压	60 V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
最大功耗	1.2W (Ta), 84W (Tc)

工作温度	175°C (TJ)