NP30N06QDK-E1-AY

Renesas Electronics Corporation

NP30N06QDK-E1-AY

Datasheet

模拟与电源

MOSFET 2N-CH 60V 30A 8HSON

在产8-PowerLDFN模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs14mOhm @ 15A, 10V
配置2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2250pF @ 25V
制造商Renesas Electronics Corporation
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA

电气

漏源电压60V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Power - Max1W (Ta), 59W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerLDFN
供应商器件封装8-HSON (5x5.4)

环境

GradeAutomotive
工作温度175°C
QualificationAEC-Q101