NP23N06YDG-E1-AY

Name: NP23N06YDG-E1-AY
Brand: Renesas Electronics Corporation

模拟与电源

MOSFET N-CH 60V 23A 8HSON

在产8-SMD, Flat Lead Exposed Pad模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	27mOhm @ 11.5A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1800 pF @ 25 V
制造商	Renesas Electronics Corporation
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 250µA

漏源电压	60 V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Current - Continuous Drain (Id) @ 25°C	23A (Tc)
最大功耗	1W (Ta), 60W (Tc)

工作温度	175°C (TJ)