NP161N04TUG-E1-AY

Renesas Electronics Corporation

NP161N04TUG-E1-AY

模拟与电源

MOSFET N-CH 40V 160A TO263-7

停产/老旧TO-263-7, D²Pak (6 Leads + Tab)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs1.8mOhm @ 80A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs345 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds20250 pF @ 25 V
制造商Renesas Electronics Corporation
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA

电气

漏源电压40 V
Current - Continuous Drain (Id) @ 25°C160A (Tc)
最大功耗1.8W (Ta), 250W (Tc)

机械

封装Bulk
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)
供应商器件封装TO-263-7

环境

工作温度175°C (TJ)