NP100N04PUK-E1-AY

Renesas Electronics Corporation

NP100N04PUK-E1-AY

Datasheet

模拟与电源

MOSFET N-CH 40V 100A TO263

在产TO-263-4, D²Pak (3 Leads + Tab), TO-263AA模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs2.3mOhm @ 50A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7050 pF @ 25 V
制造商Renesas Electronics Corporation
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±20V

电气

漏源电压40 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
最大功耗1.8W (Ta), 176W (Tc)

机械

封装Tape & Reel (TR)
Package / CaseTO-263-4, D²Pak (3 Leads + Tab), TO-263AA
供应商器件封装TO-263

环境

工作温度175°C (TJ)