NESG340033-T1B-A

Renesas Electronics Corporation

NESG340033-T1B-A

模拟与电源

SMALL SIGNAL BIPOLAR TRANSISTOR

在产TO-236-3, SC-59, SOT-23-3模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

制造商Renesas Electronics Corporation
安装类型Surface Mount
Noise Figure (dB Typ @ f)0.7dB @ 1GHz
Product StatusActive
Transistor TypeNPN

电气

Voltage - Collector Emitter Breakdown (Max)5.5V
Current - Collector (Ic) (Max)400mA
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 15mA, 3.3V
Power - Max480mW
Frequency - Transition10GHz
Gain12dB

机械

封装Bulk
Package / CaseTO-236-3, SC-59, SOT-23-3
供应商器件封装3-MINIMOLD

环境

工作温度150°C (TJ)