N0602N-S19-AY

Name: N0602N-S19-AY
Brand: Renesas Electronics Corporation

模拟与电源

MOSFET N-CH 60V 100A TO220-3

在产TO-220-3 Isolated Tab模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	4.6mOhm @ 50A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	7730 pF @ 25 V
制造商	Renesas Electronics Corporation
安装类型	Through Hole
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V

漏源电压	60 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	100A (Ta)
最大功耗	1.5W (Ta), 156W (Tc)

工作温度	150°C (TJ)