N0400P-ZK-E1-AY

Renesas Electronics Corporation

N0400P-ZK-E1-AY

Datasheet

模拟与电源

ABU / MOSFET

在产TO-252-3, DPAK (2 Leads + Tab), SC-63模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs40mOhm @ 7.5A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1400 pF @ 10 V
制造商Renesas Electronics Corporation
安装类型Surface Mount
包装Tape & Reel (TR) Cut Tape (CT)
产品状态在产
技术MOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.5V @ 1mA

电气

漏源电压40 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C15A (Tc)
最大功耗1W (Ta), 25W (Tc)

机械

Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
供应商器件封装TO-252

环境

工作温度150°C