HS54095TZ-E

Name: HS54095TZ-E
Brand: Renesas Electronics Corporation

模拟与电源

MOSFET N-CH 600V 200MA TO92-3

停产/老旧TO-226-3, TO-92-3 Short Body模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	16.5Ohm @ 100mA, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	66 pF @ 25 V
制造商	Renesas Electronics Corporation
安装类型	Through Hole
Product Status	Obsolete
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V

漏源电压	600 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	200mA (Ta)
最大功耗	750mW (Ta)

工作温度	150°C (TJ)