HAT2299WP-EL-E

Name: HAT2299WP-EL-E
Brand: Renesas Electronics Corporation

模拟与电源

MOSFET N-CH 150V 14A 8WPAK

在产8-PowerWDFN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	110mOhm @ 7A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	710 pF @ 25 V
制造商	Renesas Electronics Corporation
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V

漏源电压	150 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	14A (Ta)
最大功耗	25W (Tc)

工作温度	150°C (TJ)