HAT2267H-EL-E

Name: HAT2267H-EL-E
Brand: Renesas Electronics Corporation

模拟与电源

MOSFET N-CH 80V 25A LFPAK

在产SC-100, SOT-669模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	16mOhm @ 12.5A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2150 pF @ 10 V
制造商	Renesas Electronics Corporation
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V

漏源电压	80 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Current - Continuous Drain (Id) @ 25°C	25A (Ta)
最大功耗	25W (Tc)

工作温度	150°C (TJ)