通用
| Rds On (Max) @ Id, Vgs | 24mOhm @ 3.75A, 10V |
|---|---|
| 基础料号 | HAT2218 |
| 配置 | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | Logic Level Gate, 4.5V Drive |
| Gate Charge (Qg) (Max) @ Vgs | 4.6nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 630pF @ 10V |
| 制造商 | Renesas Electronics Corporation |
| 安装类型 | Surface Mount |
| Product Status | Obsolete |
| 技术 | MOSFET (Metal Oxide) |