HAT2170HWS-E

Renesas Electronics Corporation

HAT2170HWS-E

模拟与电源

MOSFET N-CH 40V 45A 5LFPAK

停产/老旧SC-100, SOT-669模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs4.2mOhm @ 22.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4650 pF @ 10 V
制造商Renesas Electronics Corporation
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 1mA

电气

漏源电压40 V
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Current - Continuous Drain (Id) @ 25°C45A (Ta)
最大功耗30W (Tc)

机械

封装Tape & Reel (TR)
Package / CaseSC-100, SOT-669
供应商器件封装LFPAK

环境

工作温度150°C