HAT2165N-EL-E

Name: HAT2165N-EL-E
Brand: Renesas Electronics Corporation

模拟与电源

MOSFET N-CH 30V 55A 8LFPAK

停产/老旧8-PowerSOIC (0.154", 3.90mm Width)模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	3.6mOhm @ 27.5A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	5180 pF @ 10 V
制造商	Renesas Electronics Corporation
安装类型	Surface Mount
Product Status	Obsolete
技术	MOSFET (Metal Oxide)

漏源电压	30 V
Current - Continuous Drain (Id) @ 25°C	55A (Ta)
最大功耗	30W (Tc)

工作温度	150°C (TJ)