HAT2092R-EL-E

Renesas Electronics Corporation

HAT2092R-EL-E

Datasheet

模拟与电源

MOSFET 2N-CH 30V 11A 8SOP

在产8-SOIC (0.154", 3.90mm Width)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs16mOhm @ 5.5A, 10V
基础料号HAT2092
配置2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1400pF @ 10V
制造商Renesas Electronics Corporation
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 1mA

电气

漏源电压30V
Current - Continuous Drain (Id) @ 25°C11A
Power - Max3W

机械

封装Tape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
供应商器件封装8-SOP

环境

工作温度150°C (TJ)