HAT1127HWS-E

Name: HAT1127HWS-E
Brand: Renesas Electronics Corporation

模拟与电源

MOSFET P-CH 30V 40A 5LFPAK

停产/老旧SC-100, SOT-669模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	4.5mOhm @ 20A, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	5600 pF @ 10 V
制造商	Renesas Electronics Corporation
安装类型	Surface Mount
Product Status	Obsolete
技术	MOSFET (Metal Oxide)
Vgs (Max)	+10V, -20V
Vgs(th) (Max) @ Id	2.5V @ 1mA

漏源电压	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	40A (Ta)
最大功耗	30W (Tc)

工作温度	150°C