H5N2522LSTL-E

Name: H5N2522LSTL-E
Brand: Renesas Electronics Corporation

模拟与电源

MOSFET N-CH 250V 20A 4LDPAK

在产SC-83模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	180mOhm @ 10A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1300 pF @ 25 V
制造商	Renesas Electronics Corporation
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V

漏源电压	250 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	20A (Ta)
最大功耗	75W (Tc)

工作温度	150°C (TJ)