2SK4150TZ-E

Renesas Electronics Corporation

2SK4150TZ-E

Datasheet

模拟与电源

MOSFET N-CH 250V 400MA TO92

停产/老旧TO-226-3, TO-92-3 (TO-226AA) Formed Leads模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs5.7Ohm @ 200mA, 4V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs3.7 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds80 pF @ 25 V
制造商Renesas Electronics Corporation
安装类型Through Hole
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs (Max)±10V

电气

漏源电压250 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4V
Current - Continuous Drain (Id) @ 25°C400mA (Ta)
最大功耗750mW (Ta)

机械

封装Tape & Reel (TR)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
供应商器件封装TO-92

环境

工作温度150°C (TJ)