来自已导入产品 Attributes 的结构化电气、机械和环境参数。
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 41A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 93 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5800 pF @ 10 V |
| 制造商 | Renesas Electronics Corporation |
| 安装类型 | Surface Mount |
| Product Status | Active |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| 漏源电压 | 40 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 5.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 82A (Tc) |
| 最大功耗 | 1.5W (Ta), 104W (Tc) |
| 封装 | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| 供应商器件封装 | TO-263 |
| 工作温度 | 150°C (TJ) |
|---|