2SK3659-AZ

Renesas Electronics Corporation

2SK3659-AZ

模拟与电源

MOSFET N-CH 20V 65A TO220-3

停产/老旧TO-220-3 Isolated Tab模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs5.7mOhm @ 40A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1700 pF @ 10 V
制造商Renesas Electronics Corporation
安装类型Through Hole
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 1mA

电气

漏源电压20 V
Current - Continuous Drain (Id) @ 25°C65A (Tc)

机械

封装Bulk
Package / CaseTO-220-3 Isolated Tab
供应商器件封装TO-220-3