2SJ649-AZ

Name: 2SJ649-AZ
Brand: Renesas Electronics Corporation

模拟与电源

MOSFET P-CH 60V 20A TO220

已停产TO-220-3 Isolated Tab模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	48mOhm @ 10A, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1900 pF @ 10 V
制造商	Renesas Electronics Corporation
安装类型	Through Hole
Product Status	Last Time Buy
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V

漏源电压	60 V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
最大功耗	2W (Ta), 25W (Tc)

工作温度	150°C (TJ)