UPA1728G-E1-AT

Renesas Electronics America Inc

UPA1728G-E1-AT

模拟与电源

N-CHANNEL POWER MOSFET

在产8-SOIC (0.173", 4.40mm Width)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs26mOhm @ 4.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1700 pF @ 10 V
制造商Renesas Electronics America Inc
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 1mA

电气

漏源电压60 V
Current - Continuous Drain (Id) @ 25°C9A (Ta)

机械

封装Bulk
Package / Case8-SOIC (0.173", 4.40mm Width)
供应商器件封装8-PSOP