RJK60S5DPK-M0#T0

Renesas Electronics America Inc

RJK60S5DPK-M0#T0

模拟与电源

MOSFET N-CH 600V 20A TO3PSG

停产/老旧TO-3P-3, SC-65-3模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs178mOhm @ 10A, 10V
FET FeatureSuper Junction
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1600 pF @ 25 V
制造商Renesas Electronics America Inc
安装类型Through Hole
Product StatusObsolete
技术MOSFET (Metal Oxide)

电气

漏源电压600 V
Current - Continuous Drain (Id) @ 25°C20A (Tc)

机械

封装Tube
Package / CaseTO-3P-3, SC-65-3
供应商器件封装TO-3PSG