RJK6011DJE-00#Z0

Renesas Electronics America Inc

RJK6011DJE-00#Z0

Datasheet

模拟与电源

MOSFET N-CH 600V 100MA TO92MOD

停产/老旧TO-226-3, TO-92-3 Long Body (Formed Leads)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs52Ohm @ 50mA, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs3.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds25 pF @ 25 V
制造商Renesas Electronics America Inc
安装类型Through Hole
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs (Max)±30V

电气

漏源电压600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C100mA (Ta)
最大功耗900mW (Ta)

机械

封装Tape & Reel (TR)
Package / CaseTO-226-3, TO-92-3 Long Body (Formed Leads)
供应商器件封装TO-92MOD

环境

工作温度150°C(TJ)