RJK03M2DPA-00#J5A

Name: RJK03M2DPA-00#J5A
Brand: Renesas Electronics America Inc

模拟与电源

MOSFET N-CH 30V 45A 8WPAK

在产8-WFDFN Exposed Pad模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	2.8mOhm @ 22.5A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	21.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	3850 pF @ 10 V
制造商	Renesas Electronics America Inc
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V

漏源电压	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	45A (Ta)
最大功耗	40W (Tc)

工作温度	150°C(TJ)