NP83P04PDG-E1-AY

Renesas Electronics America Inc

NP83P04PDG-E1-AY

Datasheet

模拟与电源

MOSFET P-CH 40V 83A TO-263

在产TO-263-3, D²Pak (2 Leads + Tab), TO-263AB模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs5.3mOhm @ 41.5A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds9820 pF @ 10 V
制造商Renesas Electronics America Inc
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 1mA

电气

漏源电压40 V
Current - Continuous Drain (Id) @ 25°C83A (Tc)

机械

封装Tape & Reel (TR)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
供应商器件封装TO-263