HAT2279N-EL-E

Name: HAT2279N-EL-E
Brand: Renesas Electronics America Inc

模拟与电源

MOSFET N-CH 80V 30A 8LFPAK

停产/老旧8-PowerSOIC (0.154", 3.90mm Width)模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	12.3mOhm @ 15A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	3520 pF @ 10 V
制造商	Renesas Electronics America Inc
安装类型	Surface Mount
Product Status	Obsolete
技术	MOSFET (Metal Oxide)

漏源电压	80 V
Current - Continuous Drain (Id) @ 25°C	30A (Ta)
最大功耗	25W (Tc)

工作温度	150°C(TJ)