HAT2131R-EL-E

Name: HAT2131R-EL-E
Brand: Renesas Electronics America Inc

模拟与电源

MOSFET N-CH 350V 900MA 8SOP

在产8-SOIC (0.154", 3.90mm Width)模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	3Ohm @ 450mA, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	460 pF @ 25 V
制造商	Renesas Electronics America Inc
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V

漏源电压	350 V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Current - Continuous Drain (Id) @ 25°C	900mA (Ta)
最大功耗	2.5W (Ta)

工作温度	150°C(TJ)