H7N1002LS-E

Name: H7N1002LS-E
Brand: Renesas Electronics America Inc

模拟与电源

MOSFET N-CH 100V 75A 4LDPAK

在产SC-83模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	10mOhm @ 37.5A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	9700 pF @ 10 V
制造商	Renesas Electronics America Inc
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V

漏源电压	100 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	75A (Ta)
最大功耗	100W (Tc)

工作温度	150°C(TJ)