2SB1261(1)-AZ

Renesas

2SB1261(1)-AZ

模拟与电源

2SB1261 - PNP SILICON EPITAXIAL

停产/老旧TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

制造商Renesas
安装类型Surface Mount
Product StatusObsolete
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic300mV @ 150mA, 1.5A

电气

Voltage - Collector Emitter Breakdown (Max)60 V
Current - Collector (Ic) (Max)3 A
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 600mA, 2V
Power - Max2 W
Frequency - Transition50MHz

机械

封装Bulk
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件封装TO-252 (MP-3Z)

环境

工作温度150°C (TJ)