PJW7N04_R2_00001

Panjit International Inc

PJW7N04_R2_00001

Datasheet

模拟与电源

40V N-CHANNEL ENHANCEMENT MODE M

已停产TO-261-4, TO-261AA模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs42mOhm @ 5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds410 pF @ 20 V
制造商Panjit International Inc.
安装类型Surface Mount
Product StatusNot For New Designs
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

电气

漏源电压40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C6.5A (Ta)
最大功耗3.1W (Ta)

机械

封装Tape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
供应商器件封装SOT-223

环境

工作温度-55°C ~ 150°C (TJ)