PJQ4606_R1_00001

Panjit International Inc

PJQ4606_R1_00001

Datasheet

模拟与电源

MOSFET N/P-CH 30V 7.6A 8DFN

已停产8-PowerWDFN模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V
基础料号PJQ4606
配置N and P-Channel Complementary
Gate Charge (Qg) (Max) @ Vgs4.8nC @ 4.5V, 7.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds429pF @ 25V, 846pF @ 15V
制造商Panjit International Inc.
安装类型Surface Mount
Product StatusNot For New Designs
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA

电气

漏源电压30V
Current - Continuous Drain (Id) @ 25°C7.6A (Ta), 23A (Tc), 6.7A (Ta), 20A (Tc)
Power - Max2W (Ta), 18W (Tc)

机械

封装Tape & Reel (TR)
Package / Case8-PowerWDFN
供应商器件封装DFN3030B-8

环境

工作温度-55°C ~ 150°C (TJ)