PJP35N06A_T0_00001

Panjit International Inc

PJP35N06A_T0_00001

Datasheet

模拟与电源

60V N-CHANNEL ENHANCEMENT MODE M

已停产TO-220-3模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs21mOhm @ 20A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1680 pF @ 20 V
制造商Panjit International Inc.
安装类型Through Hole
Product StatusNot For New Designs
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

电气

漏源电压60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C4.7A (Ta), 35A (Tc)
最大功耗2W (Ta), 104W (Tc)

机械

封装Tube
Package / CaseTO-220-3
供应商器件封装TO-220AB

环境

工作温度-55°C ~ 150°C (TJ)